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r 201511a 1/12 n ??? n- channel mosfet JCS620T order codes ? marking ? package halogen free ? packaging device weight jcs620vt-o-v-n-b jcs620vt ipak no tube 0.35 g(typ) jcs620rt-o-r-n-b jcs620rt dpak no tube 0.35 g(typ) jcs620rt-o-r-n-a jcs620rt dpak no brede 0.35 g(typ) jcs620ct-o-c-n-b jcs620ct to-220c no tube 2.06 g(typ) jcs620ft-o- f-n-b jcs620ft to-220mf no tube 2.22 g(typ) ? main characteristics id 5a vdss 200 v rdson-max @vgs=10v 0.8 qg-typ 7.39nc ? ? ??? ? ? ups ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ups ? ? ? ? c rss ? ?? ? ??? ? ? dv/dt ? rohs ? features ? low gate charge ? low c rss ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs product ? order message ? package
r JCS620T 201511a 2/12 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs620vt/rt/ct jcs620ft unit ???? drain-source voltage v dss 200 v 5 5* a ? drain current -continuous i d t=25 t=100 4 4* a ?? 1 drain current -pulse note 1 i dm 20 20* a ??? gate-source voltage v gss 30 v ?? 2 single pulsed avalanche energy note 2 e as 31.25 mj ?? 1 avalanche current note 1 i ar 5 a ??? 1 repetitive avalanche current note 1 e ar 8.3 3.6 mj ??? ?? 3 peak diode recovery dv/dt note 3 dv/dt 5 v/ns 83 36 w ? power dissipation p d t c =25 -derate above 25 0.67 0.29 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS620T 201511a 3/12 electrical characteristic ? parameter symbol tests conditions min typ max units ? off Ccharacteristics ??? drain-source voltage bv dss i d =250a, v gs =0v 200 - - v ?? breakdown voltage temperature coefficient bv dss /t j i d =250a, referenced to 25 - 0.2 - v/ v ds =200v, v gs =0v, t c =25 - - 1 a ???? zero gate voltage drain current i dss v ds =160v, t c =125 - - 10 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =2.5a - 0.55 0.8 ? forward transconductance g fs v ds = 40v , i d =2.5a note 4 - 2.4 - s ? dynamic characteristics input capacitance c iss - 216 pf output capacitance c oss - 58 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 9.3 pf
r JCS620T 201511a 4/12 electrical characteristics thermal characteristic ? value ? parameter symbol jcs620vt/rt/ct jcs620ft unit ??? thermal resistance, junction to case rth(j-c) 1.5 3.5 /w ? thermal resistance, junction to ambient rth(j-a) 62.5 /w ? parameter symbol tests conditions min typ max units switching Ccharacteristics ?? turn-on delay time t d (on) - 11.5 17 ns ? turn-on rise time t r - 23.5 35 ns ?? turn-off delay time t d (off) - 26.4 40 ns ?? turn-off fall time t f v dd =100v,i d =5a,r g =25? v gs =10v note 4 5 - 10.7 16 ns ? total gate charge q g - 7.39 10 nc ?? gate-source charge q gs - 1.89 - nc ?? gate-drain charge q gd v ds =160v , i d =5a v gs =10v note 4 5 - 4.19 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain-source diode forward current i s - - 5 a maximum pulsed drain-source diode forward current i sm - - 20 a maximum continuous drain-source diode forward current v sd v gs =0v, i s =5a - 1.4 v ?? reverse recovery time t rr 120 ns ? reverse recovery charge q rr v gs =0v, i s =5a di f /dt=100a/s (note 4) 430 nc ? 1 ? 2 l=2.5mh, i as =5a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 5a,di/dt 200a/s, vddbv dss , ? t j =25 4 ? 300s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=2.5mh, i as =5a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 5a,di/dt 200a/s, vddbv dss , starting t j =25 4 pulse test pulse width 300s, duty cycle2 5 essentially independent of operating temperature
r JCS620T 201511a 5/12 electrical characteristics (curves) 4 6 8 10 12 1 10 100 notes: 1.250s pulse test 2.v ds =40v 25 i d [a] v gs [v] 150 10 0 10 1 0.0 5.0x10 1 1.0x10 2 1.5x10 2 2.0x10 2 2.5x10 2 3.0x10 2 3.5x10 2 4.0x10 2 4.5x10 2 5.0x10 2 c rss c oss c iss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v d s drain-source voltage [v] 0 2 4 6 8 10 12 0 2 4 6 8 10 notes: i d =5a v ds =40v v ds =100v v ds =160v q g toltal gate charge [nc] v gs gate source voltage[v] transfer characteristics body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics typical output characteristics, tc = 25 c breakdown voltage variation vs. temperature
r JCS620T 201511a 6/12 electrical characteristics (curves) 25 50 75 100 125 150 0 1 2 3 4 5 6 i d drain current [a] t c case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 10s 1ms 100s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 10s 1ms 100s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] on-resistance variation vs. temperature maximum safe operating area for jcs6 20ct /v t /r t maximum drain current vs. case temperature maximum safe operating area for jcs6 2 0f t
r JCS620T 201511a 7/12 electrical characteristics (curves) 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u l s e 0 . 0 1 n o t e s : 1 z j c ( t ) = 1 . 5 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 1 0 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u l s e 0 . 0 1 n o t e s : 1 z j c ( t ) = 3 . 5 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m transient thermal response curve for jcs620ct/vt/rt transient thermal response curve for jcs620ft
r JCS620T 201511a 8/12 ? package mechanical data to-220c unit mm
r JCS620T 201511a 9/12 ? package mechanical data to-220mf unit mm
r JCS620T 201511a 10/12 ? package mechanical data ipak unit mm
r JCS620T 201511a 11/12 ? package mechanical data dpak unit mm
r JCS620T 201511a 12/12 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? htu www.hwdz.com.cn uth ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86-432-64678411 fax 86-432-64665812 web site htu www.hwdz.com.cn uth market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533

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